Аннотация:Graphene has become an extremely prospective material for numerous applications because of its excellent electrical and optical properties.The combination of conductivity and high transparency and the ability of large-area production render graphene suitable as a contact layer and transparent electrode in solar cells.Graphene brought into direct contact with n-type silicon introduces a built-in electric fi eld at the heterojunction interface and forms a Schottky contact.Solar cells utilizing this effect show a conversion effi ciency of 4.2%.However, the graphene-Si Schottky diodes are not stable and degrade strongly during the fi rst days.In the study by the infl uence of the graphene-silicon interface on the solar cell properties is investigated.The quality of this interface is crucial since the concentration of localized states and its ability to block minority carriers infl uence the device performance signifi cantly.Passivation of the silicon surface with methyl groups prior to graphene deposition reduces recombination loss at the graphene/ Si heterojunction.In addition, it enhances and stabilizes the photoelectric performance of undoped graphene/n-type c-Si(111) solar cells.
Год издания:2014
Издательство:Wiley
Источник:physica status solidi (a)
Ключевые слова:Solid-state spectroscopy and crystallography
