Аннотация:The crystal structure of films formed by molecular beam epitaxy (MBE) CaSi2 on Si (111) under electron irradiation was investigated [1]. It was found by the method of Raman scattering (RS) that with an increase in the thickness of the CaF2 film, a structural transition occurs in the CaSi2 film of the space group R3̅m from the 3-layer to 6-layer translational period of the crystal lattice (from 3R to 6R).
Источник:International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Ключевые слова:Semiconductor materials and interfaces, Ion-surface interactions and analysis, Electron and X-Ray Spectroscopy Techniques
