Аннотация:A theoretical calculation of the conductivity in bilayer dielectrics structures is performed. Optimal materials for creating a self-displaced selector device for resistive memory elements (RRAM) are determined by computer simulation of the VAC.
Источник:International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis
Ключевые слова:Advanced Memory and Neural Computing, Semiconductor materials and devices, Transition Metal Oxide Nanomaterials
