Аннотация:The energy level of electron traps in silicon nitride (SiNx) thin films was investigated by discharging current transient spectroscopy (DCTS). Results indicate that the trap level of the SiNx thin films becomes deeper with decreasing composition (N/Si) and shallower after hydrogen annealing. The dependence of the trap level on the SiNx composition and the modulation of the trap level by hydrogen annealing are possibly related to the change in the number of Si–H bonds in the SiNx thin films.
