Аннотация:Based on a novel device concept, we have fabricated high-performance carbon nanotube transistors exhibiting pure n- and p-type behavior, tunable by electrostatic and/or chemical doping, with excellent off-state performance and the smallest inverse subthreshold slope (63 mV/dec) reported to date. This is achieved by combined electrostatic and chemical doping profiles along the nanotube channel. The device design allows for aggressive oxide thickness scaling while maintaining the desired device characteristics.
