Аннотация:The development of the self‐organized growth of pentacence thin films on the channel region of a thin‐film transistor (TFT) using surface modifications induced by organic vapor phase deposition is reported (see Figure). A bottom‐contact TFT on plastic using an organic gate insulator of cross‐linked poly‐(4‐vinylphenol) exhibited a field‐effect mobility of 1.2 cm 2 /Vs and an on/off current ratio of ∼ 10 7 .
