Аннотация:Thermal stability of TiSi2 on mono- and polycrystalline silicon was investigated by cross-sectional transmission electron microscopy and high-resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.
