Аннотация:Semi-insulating gallium arsenide was exposed to cavitation impact initiated by focusing a high-frequency acoustic wave into liquid nitrogen. Optical and atomic force microscopy methods were used for the analysis of surface morphology. Formation of microstructures as well as change in the chemical composition of the surface are observed. The morphology of the structures is highly dependent on the acoustic parameters. Raman spectroscopy data have confirmed the incorporation of nitrogen atoms into the GaAs lattice and Ga–N bond formation in the region of maximal structural change due to the cavitation impact.
