Аннотация:We report the dependence of the electronic properties on the metal composition and oxygen content of transparent conducting amorphous indium zinc oxide $(a\text{\ensuremath{-}}\mathrm{IZO})$ films deposited by dc magnetron sputtering. $a\text{\ensuremath{-}}\mathrm{IZO}$ shows a clear Burstein--Moss shift with an effective optical band gap of $3.1\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ independent of the metal composition. A metal-composition-independent dependence of the mobility $(\ensuremath{\mu})$ on carrier concentration $(N)$ is also found for $a\text{\ensuremath{-}}\mathrm{IZO}$ with ${\ensuremath{\mu}}_{\mathrm{max}}=54\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.2em}{0ex}}\mathrm{s}$ at $N=1.3\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$. The electron transport, thermally activated at $N\ensuremath{\leqslant}{10}^{19}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$, becomes limited by lattice scattering at $N\ensuremath{\approx}{10}^{20}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ and then by ionized impurity scattering at $N>5\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$.
