Аннотация:The development of a high-intensity Cs sputter negative ion source has been completed. The source is equipped with a spherical tungsten ionizer and a target wheel with 18 sample positions. The wheel is separated from the hot sputter region by a gate valve in order to change the samples rapidly and reduce cross contamination. A drive system can push the selected sample into the sputter position and pull it back to the wheel. A metal-ceramic bonded ring is used to support all the parts at sputter potential. The ring is protected from vapor depositions by a specially designed shielding structure, resulting in reliable insulation between the ionizer and the sputter samples. No insulation trouble has occurred during the work for over one year. Beams of 10-μA BeO−, 5-μA Al−, 4.5-μA Fe−, and 350-μA C−, etc. have been delivered. The normalized beam emittance ranges from (2–4) πmm mrad MeV1/2. The memory effect has been evaluated. More than 1000 and 500 times of attenuation for C− and BeO− are observed, respectively, in 10 min after a sample change. The ionization efficiency for 12C− is higher than 5.4% for a graphite sample.
