Аннотация:In this paper, an accurate validation method for dynamic nonlinear behavioral models of wideband RF high power amplifiers is presented. This method is an indirect validation approach which is based on memoryless predistortion technique to remove the out-of-band spectrum regrowth caused by static memoryless nonlinearities of the power amplifiers. The effectiveness of the model validation method is demonstrated with an L-band push-pull GaAs FET 45-dBm peak-envelope-power amplifier stimulated by a two-carrier 3GPP-FDD WCDMA signal.
