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Quantum Spin HallInsulator State inHgTe Quantum Wells Markus KönigS. WiedmannC. Brüne2007 год

Quantum Spin Hall Insulator State in HgTe Quantum Wells
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Аннотация: Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e^2/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nm, is also independently determined from the magnetic field induced insulator to metal transition. These observations provide experimental evidence of the quantum spin Hall effect.
Год издания: 2007
Авторы: Markus König, S. Wiedmann, C. Brüne, Andreas Roth, H. Buhmann, L. W. Molenkamp, Xiao-Liang Qi, Shou-Cheng Zhang
Издательство: American Association for the Advancement of Science
Источник: Science
Ключевые слова: Quantum and electron transport phenomena, Topological Materials and Phenomena, Graphene research and applications
Другие ссылки: Science (HTML)
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (PDF)
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (HTML)
arXiv (Cornell University) (PDF)
arXiv (Cornell University) (PDF)
arXiv (Cornell University) (HTML)
PubMed (HTML)
DataCite API (HTML)