Аннотация:We report an in situ study of the molecular-beam epitaxy growth and annealing of Cu(001) films grown on hydrogen-terminated Si(001) substrates, resulting in a promising approach to achieve smooth epitaxial morphology. Using correlated reflection high-energy electron diffraction and scanning tunneling microscopy data, we find a temperature interval below the onset of silicide formation where a dramatic smoothening of the epitaxial Cu surfaces occurs. Our measurements indicate that a reduction in roughness is possible in this regime because the annealing is controlled by lateral diffusion kinetics.
