Аннотация:A new technique is reported for determining the interface states in the metal-semiconductor junction by deep level transient spectroscopy. The continuous interface state distribution in the Al-GaAs junction has been studied for the energy range from 0.19 to 0.57 eV below conduction band by the technique and it is found to be of the order of 4.3×1010–7.9×1010 eV−1 cm−2. The results have shown that the technique is very effective and credible.
