Аннотация:One major challenge for the development of spintronic devices is the control of the spin polarization of an electron current. We propose and demonstrate the use of a BeTe/Zn1−xSe/BeTe double barrier resonant tunneling diode for the injection of a spin-polarized electron current into GaAs and the manipulation of the spin orientation of the injected carriers via an external voltage. A spin polarization of up to 80% can be observed with a semimagnetic layer of only 3.5 nm thickness. By changing the resonance condition via the external voltage, the degree of spin polarization can be varied, though a complete spin switching has not yet been accomplished.
