Аннотация:Degradation of GaAs/AlGaAs double-heterostructure light-emitting diodes under accelerated aging tests has been investigated through cathodoluminescence measurements. We observed an increase in intensity of the band-edge emission and a decrease in that of defect-related deep level emision for the cladding layers. As for the active layer, a decrease was observed in the intensity of the band-edge emission. These results suggest that defects migrate gradually from the cladding layer into the active layer.
