Аннотация:Microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes, which were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure chemical vapor deposition. Strain-induced band gap narrowing was directly observed by identifying the PL peak of the free exciton band-band transition in membranes, from which the strain ratio was estimated for each sample. Strain was reasonably dependent on the sample parameters, which implies that this measurement gives valid results.
Ключевые слова:Semiconductor materials and devices, Integrated Circuits and Semiconductor Failure Analysis, Advancements in Semiconductor Devices and Circuit Design
