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Low-loss InGaAs/InPmultiple quantum wellopticalelectroabsorptionwaveguide modulator U. KorenB.I. MillerThomas Koch1987 год

Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator
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Аннотация: An optical electroabsorption waveguide modulator is described based on the quantum-confined Stark effect in an InGaAs/InP multiple quantum well waveguide. The optical modulator has a high on/off ratio (47:1) with very low insertion loss (2.9 dB) and a 3-dB modulation bandwidth of 3.0 GHz at 0.1 mW optical input power.
Год издания: 1987
Авторы: U. Koren, B.I. Miller, Thomas Koch, G. Eisenstein, R.S. Tucker, I. Bar‐Joseph, D. S. Chemla
Издательство: American Institute of Physics
Источник: Applied Physics Letters
Ключевые слова: Semiconductor Lasers and Optical Devices, Semiconductor Quantum Structures and Devices, Photonic and Optical Devices