Extremely large magnetotransport phenomena were found in the simple devices fabricated on base of the Me/
SiO2/p-Si hybrid structures (where Me are Mn and Fe). These effects include gigantic magnetoimpedance (MI),
dc magnetoresistance (MR) and the lateral magneto-photo-voltaic effect (LMPE). The MI and MR values exceed
106% in magnetic field about 0.2 T for Mn/SiO2/p-Si Schottky diode. LMPE observed in Fe/SiO2/p-Si lateral
device reaches the value of 104% in a field of 1 T. We believe that in case with the Schottky diode MR and MI
effects are originate from magnetic field influence on impact ionization process by two different ways. First, the
trajectory of the electron is deflected by a magnetic field, which suppresses acquisition of kinetic energy and
therefore impact ionization. Second, the magnetic field gives rise to shift of the acceptor energy levels in silicon
to a higher energy. As a result, the activation energy for impact ionization significantly increases and
consequently threshold voltage rises. Moreover, the second mechanism (acceptor level energy shifting in
magnetic field) can be responsible for giant LMPE.