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Ultrafine Ir-IrO2nanoparticles fordecoration of cobaltphthalocyanine filmsas an activecomponent for highlysensitive detection…: научное издание Dorovskikh S.I.Klyamer D.D.Krasnov P.O.2025 год

Ultrafine Ir-IrO2 nanoparticles for decoration of cobalt phthalocyanine films as an active component for highly sensitive detection of nitric oxide : научное издание
статья из журнала

Дополнительные ссылки: eLibrary
База данных: Каталог библиотеки СФУ
Библиографическое описание: Ultrafine Ir-IrO2 nanoparticles for decoration of cobalt phthalocyanine films as an active component for highly sensitive detection of nitric oxide : научное издание / S. I. Dorovskikh, D. D. Klyamer, P. O. Krasnov [et al.]. - Текст : непосредственный // Materials Science and Engineering: B. - 2025. - Т. 314, № . - P. 118074. - ISSN 0921-5107. - ISSN 1873-4944, DOI 10.1016/j.mseb.2025.118074.
Аннотация: Nitric oxide is an important molecule that plays a crucial role in regulating physiological processes in mammals. To develop a sensitive method for detecting NO, new heterostructures based on cobalt phthalocyanine (CoPc) films decorated with Ir-IrO2 nanoparticles were considered as active layers of chemiresistive sensors for the direct NO detection. Within deposition conditions, Ir-IrO2 nanoparticles with an Ir concentration of 0.48–1.5 µg/cm2, a fraction of IrO2 phase of 10–20 %, and particles sizes from 1 to 3 to 14 nm were obtained on the surface of CoPc films. The influence of these parameters of Ir-IrO2 particles on the sensor response of Ir-IrO2/CoPc heterostructures to NO was investigated using theoretical and practical approaches. Based on DFT calculations, an electronic sensitization mechanism of NO detection by Ir-IrO2/CoPc heterostructures was proposed. These heterostructures are able to detect of NO gas at the ppb level and show the selectively to NOx in the presense of other gases.
Год издания: 2025
Авторы: Dorovskikh S.I., Klyamer D.D., Krasnov P.O., Shutilov R.A., Nasimov D.A. , Prosvirin I.P., Volchek V.V., Zharkov S.M., Khubezhov S.A., Morozova N.B., Basova T.V.
Издательство: Elsevier Science Publishing Company, Inc.
Источник: Materials Science and Engineering: B
Выпуск: Т. 314
Номера страниц: 118074
Держатель оригинала документа: Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences
Количество экземпляров:
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