Библиографическое описание:Plasma-Chemical Method of Silicon Carbide Modification to Obtain Particles with Controlled Surface Morphology : научное издание / T. A. Shalygina [et al.]. - Текст : непосредственный // Technical Physics Letters. - 2024. - Т.50, №2. - P. 239-243. - This study was conducted under state assignment from the Ministry of Science and Higher Education of the Russian Federation for the “Smart Materials and Structures” research laboratory (project no. FEFE-2020-0015 “Development of Multipurpose Smart Materials and Structures Based on Modified Polymer Composite Materials Remaining Functional in Extreme Conditions”). - ISSN 1063-7850. - ISSN 1090-6533, DOI 10.1134/S1063785023180189.
Аннотация:A plasma-chemical method for the modification of silicon carbide particles is presented, which makes it possible to obtain particles with a controlled surface morphology. The variable parameter of particle processing was the ratio of the fraction of plasma-forming (Ar) and additional (H) gases. It was shown that at Ar/H = 100/0, the formation of a carbon shell is observed; at Ar/H ratios of 91/9 and 84/16, the particles are characterized by a carbon shell decorated with silicon nanoparticles or nanowires, respectively. The modified particles were analyzed using scanning electron microscopy and Raman spectroscopy.
Издательство:Pleiades Publishing, Ltd. (Плеадес Паблишинг, Лтд), Санкт-Петербург
Источник:Technical Physics Letters
Выпуск:Т.50, №2
Номера страниц:239-243
Держатель оригинала документа:Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS, Russian Academy of Sciences, Kirensky Institute of Physics, Federal Research Center KSC SB, Russian Academy of Sciences, Reshetnev Siberian State Aerospace University, Siberian Federal University
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