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Investigation ofSurface Magnetism inSystems Based onMnBi2Te4 Using theMagneto-Optical KerrEffect Glazkova D.A.Estyunin D.A.Tarasov A.S.2024 год

Investigation of Surface Magnetism in Systems Based on MnBi2Te4 Using the Magneto-Optical Kerr Effect : научное издание
статья из журнала

Дополнительные ссылки: eLibrary
База данных: Каталог библиотеки СФУ
Библиографическое описание: Investigation of Surface Magnetism in Systems Based on MnBi2Te4 Using the Magneto-Optical Kerr Effect : научное издание / D. A. Glazkova [et al.]. - Текст : непосредственный // Crystallography Reports. - 2024. - Т.69, №1. - P. 79-84. - This study was supported by the St. Petersburg State University (project no. 94031444) and the Russian Science Foundation (grant no. 23-12-00016). The samples were synthesized within the project “State Assignment for the Sobolev Institute of Geology and Mineralogy of the Siberian Branch of the Russian Academy of Sciences and the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences.”. - ISSN 1063-7745. - ISSN 1562-689X, DOI 10.1134/S1063774523601296.
Аннотация: MnBi<sub>2</sub>Te<sub>4</sub>, Mn(Bi,Sb)<sub>2</sub>Te<sub>4</sub>, and MnBi<sub>2</sub>Te<sub>4</sub>(Bi<sub>2</sub>Te<sub>3</sub>)<sub><i>m</i></sub> (<i>m</i> ≥ 1) are assigned to magnetic topological insulators. Successful application of these materials in nanoelectronic devices calls for comprehensive investigation of their electronic structure and magnetic properties in dependence of the Bi/Sb atomic ratio and the number <i>m</i> of Bi<sub>2</sub>Te<sub>3</sub> blocks. The magnetic properties of the surface of MnBi<sub>2</sub>Te<sub>4</sub>, MnBi<sub>4</sub>Te<sub>7</sub>, and Mn(Bi$_{{1-x}}$Sb<sub><i>x</i></sub>)<sub>2</sub>Te<sub>4</sub> compounds (<i>x</i> = 0.43 and 0.32) have been studied using the magneto-optical Kerr effect. It is shown that the temperatures of magnetic transitions on the surface and in the bulk of MnBi<sub>4</sub>Te<sub>7</sub> and Mn(Bi, Sb)<sub>2</sub>Te<sub>4</sub> differ significantly.
Год издания: 2024
Авторы: Glazkova D.A. , Estyunin D.A. , Tarasov A.S. , Kosyrev N.N. , Komarov V.A. , Patrin G.S. , Golyashov V.A. , Tereshchenko O.E. , Kokh K.A. , Koroleva A.V. , Shikin A.M.
Издательство: Pleiades Publishing, Inc., Нью-Йорк
Источник: Crystallography Reports
Выпуск: Т.69, №1
Номера страниц: 79-84
Держатель оригинала документа: Institute of Engineering Physics and Radioelectronics, Siberian Federal University, Kirensky Institute of Physics, Federal Research Center “Krasnoyarsk Science Center of the Siberian Branch of the Russian Academy of Sciences”, Krasnoyarsk State Agrarian University, Achinsk Branch, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, St. Petersburg State University
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