Double-Site Occupation Triggered Broadband and Tunable NIR-I and NIR-II Luminescence in AlNbO4:Cr3+Phosphors : научное издание

Lyu Kuangnan; Liu Gaochao; Molokeev Maxim S.; Xia Zhiguo

Дополнительные ссылки: eLibrary

База данных: Каталог библиотеки СФУ

Библиографическое описание: Double-Site Occupation Triggered Broadband and Tunable NIR-I and NIR-II Luminescence in AlNbO4:Cr3+Phosphors : научное издание / K. K. Lyu [et al.]. - Текст : непосредственный // Advanced Physics Research. - 2023. - Т. 2, № 4. - P. 2200056. - This research was supported by the International Cooperation Project of the National Key Research and Development Program of China (2021YFB3500400 and 2021YFE0105700), National Natural Science Foundations of China (Grant No. 51972118), Guangzhou Science & Tech-nology Project (202007020005), the State Key Laboratory of Lumines-cent Materials and Devices (Skllmd-2022-02), and the Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program (2017BT01×137). This work was also funded by RFBR according to the research project No. 19-52-80003. - ISSN 2751-1200, DOI 10.1002/apxr.202200056.

Аннотация: Near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are desired for optoelectronic and biomedical applications, while the development of target broadband NIR phosphors still remains a significant challenge. Herein, a kind of Cr3+‐doped AlNbO4 phosphors with a broad NIR emission ranging from 650 to 1400 nm under 450 nm excitation are reported. A giant red‐shift emission peak from 866 to 1020 nm together with broadened full width at half‐maximum of 320 nm is achieved simply by varying the doped Cr3+ concentrations. Structural and spectroscopy analysis demonstrate that a concentration‐dependent site‐occupation of Cr3+ emitters in different Al3+ sites is responsible for the tunable NIR luminescence. The as‐fabricated NIR pc‐LED based on optimized AlNbO4:Cr3+ phosphor exhibits great potential in night‐vision applications. This work provides a novel design principle on the Cr3+‐doped AlNbO4 phosphor with tunable broadband luminescence from NIR‐I to NIR‐II, and these materials can be employed in NIR spectroscopy applications. Al1−xNbO4:xCr3+ phosphors exhibit broadband near‐infrared (NIR) emissions with a dramatic redshift with an increase of Cr3+ concentration， which is attributed to double Cr3+ emission centers, comfirmed by structural and spectral analysis. The NIR phosphor‐converted light‐emitting diode device is fabricated and a night‐visible image and transmittance spectra are captured, suggesting potential for NIR spectroscopy applications.

Год издания: 2023

Авторы: Lyu Kuangnan , Liu Gaochao , Molokeev Maxim S. , Xia Zhiguo

Издательство: John Wiley & Sons, Berlin

Источник: Advanced Physics Research

Выпуск: Т. 2, № 4

Номера страниц: 2200056

Держатель оригинала документа: Kemerovo State University, Krasnoyarsk Science Centre of the Siberian Branch of Russian Academy of Science, Siberian Federal University, South China University of Technology

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Double-Site Occupation Triggered Broadband and Tunable NIR-I and NIR-II Luminescence in AlNbO4:Cr3+Phosphors : научное издание
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