The formation of structural imperfections in semiconductor silicon / : библиография

Talanin (Vitaliĭ Igorʹevich)

База данных: Каталог библиотеки СФУ (621.38152 T44)

Библиографическое описание: Talanin, (Vitaliĭ Igorʹevich). The formation of structural imperfections in semiconductor silicon / : библиография / V. I. Talanin ; author. (Igor Evgenievich), Talanin, I. E. - Электрон. текстовые дан. - [S. l. : s. n.], 2018. - 1 online resource (xii, 269 pages) : il. - Загл. с титул. экрана. - Includes bibliographical references (pages 239-267). - ISBN 9781527523425. - ISBN 152752342X : Б. ц. - Текст : электронный. Примечания о происхождении: Коллекция цифровых книг Ebsco ebook (централизованная подписка 2023 г., бессрочный доступ). НБ СФУ

Аннотация: "Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students."--

Год издания: 2018

Авторы: Talanin (Vitaliĭ Igorʹevich)

Редакторы, составители и др.: Talanin, I. E. (Igor Evgenievich), (author.)

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Цифровые и тематические книжные коллекции издания

Коллекция цифровых книг Ebsco ebook (централизованная подписка, 2023 г., бессрочный доступ)

Содержание

Chapter one. Growth of dislocation-free silicon single crystals from melt and defect formation
Chapter two. Physical modeling of defect formation processes in dislocation-free single crystals of silicon
Chapter three. Physical basis of a heterogenous (two-stage) model of grown-in microdefect formation
Chapter four. High-temperature precipitation of impurity in dislocation-free silicon single crystals
Chapter five. The formation of microvoids and interstitial dislocation loops during crystal cooling after growing
Chapter six. General approach to the engineering of defects in semiconductor silicon.