Thickness-dependent Schottky barrier height of MoS2field-effect transistors
Work
Year: 2017
Type: article
Source: Nanoscale
Institutions Yonsei University, Electronics and Telecommunications Research Institute, Korea University, Columbia University
Cites: 40
Cited by: 129
Related to: 10
FWCI: 6.486
Citation percentile (by year/subfield): 100
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funders Ministry of Science, ICT and Future Planning, National Research Foundation of Korea, National Research Foundation of Korea
Grant IDS B0117-16-1003, 2014R1A1A2055112, 2014R1A1A1004632