Abstract:
A 29-mm/sup 2/, 16-Mb divided bitline NOR (DINOR) flash memory is fabricated using 0.25-/spl mu/m triple-well three-layer-metal CMOS technology. Read access time is 72 ns...Show MoreMetadata
Abstract:
A 29-mm/sup 2/, 16-Mb divided bitline NOR (DINOR) flash memory is fabricated using 0.25-/spl mu/m triple-well three-layer-metal CMOS technology. Read access time is 72 ns at 1.8 V. A poly diode charge-pump technique improves pump efficiency and eliminates the body effect problem.
Published in: IEEE Journal of Solid-State Circuits ( Volume: 34, Issue: 11, November 1999)
DOI: 10.1109/4.799862
